Comparing InSb, InAs and InSb/InAs nanowire MOSFETs

Abstract

Various channel materials are considered forth e III-V MOSFETs [1]. Among the III A/s, InSb has the highest mobility and the lowest effective mass. We may hence expect a large source injection velocity, but also parasitic leakage due to tunneling. Furthermore, the low density of states in the conduction band implies a small quantum capacitance. These effects may be studied in nanowire devices. So far, there are very few reports on detailed st udies o f transport in InSb nanowire MOSFETs [2], and the possibility to form heterostructures has not been exploited. In this paper, we present detailed characterization of InSb nanowire MOSFETs that is combined with a comparison to InAs and InSb/lnAs nanowire MOSFETs formed on the same nanowire. Show more