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ICP Dry Etching of ZnO and Effects of Hydrogen

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dc.contributor.authorIp, K.
dc.contributor.authorOverberg, M. E.
dc.contributor.authorBaik, K. W.
dc.contributor.authorWilson, R. G.
dc.contributor.authorKucheyev, Sergei
dc.contributor.authorWilliams, James
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorRen, Fan
dc.contributor.authorHeo, Y. W.
dc.contributor.authorNorton, D. P.
dc.contributor.authorZavada, J. M.
dc.contributor.authorPearton, S. J.
dc.date.accessioned2015-12-13T23:22:53Z
dc.date.available2015-12-13T23:22:53Z
dc.date.issued2003
dc.date.updated2015-12-12T09:12:57Z
dc.description.abstractTwo different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface m
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/1885/91653
dc.publisherElsevier
dc.sourceSolid-State Electronics
dc.subjectKeywords: Composition; Dry etching; Inductively coupled plasma; Morphology; Scanning electron microscopy; Ion energy; Zinc oxide
dc.titleICP Dry Etching of ZnO and Effects of Hydrogen
dc.typeJournal article
local.bibliographicCitation.lastpage2294
local.bibliographicCitation.startpage2289
local.contributor.affiliationIp, K, University of Florida
local.contributor.affiliationOverberg, M E, University of Florida
local.contributor.affiliationBaik, K W, University of Florida
local.contributor.affiliationWilson, R G, No formal affiliation
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRen, Fan, University of Florida
local.contributor.affiliationHeo, Y W, University of Florida
local.contributor.affiliationNorton, D P, University of Florida
local.contributor.affiliationZavada, J M, US Army
local.contributor.affiliationPearton, S J, University of Florida
local.contributor.authoruidKucheyev, Sergei, u9910365
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22473
local.identifier.citationvolume47
local.identifier.doi10.1016/S0038-1101(03)00211-9
local.identifier.scopusID2-s2.0-0142055136
local.type.statusPublished Version

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