ICP Dry Etching of ZnO and Effects of Hydrogen
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Date
Authors
Ip, K.
Overberg, M. E.
Baik, K. W.
Wilson, R. G.
Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Ren, Fan
Heo, Y. W.
Norton, D. P.
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Elsevier
Abstract
Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface m
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Solid-State Electronics