ICP Dry Etching of ZnO and Effects of Hydrogen

Ip, K.; Overberg, M. E.; Baik, K. W.; Wilson, R. G.; Kucheyev, Sergei; Williams, James; Jagadish, Chennupati; Ren, Fan; Heo, Y. W.; Norton, D. P.; Zavada, J. M.; Pearton, S. J.

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

ICP Dry Etching of ZnO and Effects of Hydrogen

Date

2003

Authors

Ip, K.

Overberg, M. E.

Baik, K. W.

Wilson, R. G.

Kucheyev, Sergei

Williams, James

Jagadish, Chennupati

Ren, Fan

Heo, Y. W.

Norton, D. P.

Publisher

Elsevier

Abstract

Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface m