ICP Dry Etching of ZnO and Effects of Hydrogen

Date

2003

Authors

Ip, K.
Overberg, M. E.
Baik, K. W.
Wilson, R. G.
Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Ren, Fan
Heo, Y. W.
Norton, D. P.

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface m

Description

Keywords

Keywords: Composition; Dry etching; Inductively coupled plasma; Morphology; Scanning electron microscopy; Ion energy; Zinc oxide

Citation

Source

Solid-State Electronics

Type

Journal article

Book Title

Entity type

Access Statement

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