ICP Dry Etching of ZnO and Effects of Hydrogen
Date
2003
Authors
Ip, K.
Overberg, M. E.
Baik, K. W.
Wilson, R. G.
Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Ren, Fan
Heo, Y. W.
Norton, D. P.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of ∼1200 Å/min for Cl2/Ar and ∼3000 Å/min for CH4/H2/Ar. The evolution of surface m
Description
Keywords
Keywords: Composition; Dry etching; Inductively coupled plasma; Morphology; Scanning electron microscopy; Ion energy; Zinc oxide
Citation
Collections
Source
Solid-State Electronics
Type
Journal article