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Crystal phases in III-V nanowires: From random toward engineered polytypism

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dc.contributor.authorCaroff, Philippe
dc.contributor.authorBolinsson, Jessica
dc.contributor.authorJohansson, Jonas
dc.date.accessioned2015-12-13T23:02:26Z
dc.date.issued2011
dc.date.updated2016-02-24T08:44:32Z
dc.description.abstractIII-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random
dc.identifier.issn1077-260X
dc.identifier.urihttp://hdl.handle.net/1885/84887
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.sourceIEEE Journal on Selected Topics in Quantum Electronics
dc.subjectKeywords: III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; Polytypism; thermodynamic modeling; Twin planes; Vapor-liquid-solid growth; Wurtzites; zinc blende (ZB); Epitaxial growth; Molecul Gold-assisted vapor-liquid-solid (VLS) growth; III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; polytypism; stacking faults (SFs); thermodynamic modeling; twin plane (TP); wurtzit
dc.titleCrystal phases in III-V nanowires: From random toward engineered polytypism
dc.typeJournal article
local.bibliographicCitation.issue4
local.bibliographicCitation.lastpage846
local.bibliographicCitation.startpage829
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBolinsson, Jessica, Lund University
local.contributor.affiliationJohansson, Jonas, Lund University
local.contributor.authoruidCaroff, Philippe, u5309137
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.ariespublicationf5625xPUB13116
local.identifier.citationvolume17
local.identifier.doi10.1109/JSTQE.2010.2070790
local.identifier.scopusID2-s2.0-80051705411
local.type.statusPublished Version

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