Crystal phases in III-V nanowires: From random toward engineered polytypism

Date

2011

Authors

Caroff, Philippe
Bolinsson, Jessica
Johansson, Jonas

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random

Description

Keywords

Keywords: III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; Polytypism; thermodynamic modeling; Twin planes; Vapor-liquid-solid growth; Wurtzites; zinc blende (ZB); Epitaxial growth; Molecul Gold-assisted vapor-liquid-solid (VLS) growth; III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; polytypism; stacking faults (SFs); thermodynamic modeling; twin plane (TP); wurtzit

Citation

Source

IEEE Journal on Selected Topics in Quantum Electronics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/JSTQE.2010.2070790

Restricted until

2037-12-31