Trap-Limited Migration of Vacancy-Type Defects in 7.5 keV H - -Implanted Si

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dc.contributor.authorDeenapanray, Prakash
dc.date.accessioned2015-12-13T23:22:55Z
dc.date.available2015-12-13T23:22:55Z
dc.date.issued2002
dc.date.updated2015-12-12T09:13:06Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/91668
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.titleTrap-Limited Migration of Vacancy-Type Defects in 7.5 keV H - -Implanted Si
dc.typeJournal article
local.bibliographicCitation.issue9
local.bibliographicCitation.lastpage1579
local.bibliographicCitation.startpage1577
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidDeenapanray, Prakash, u4018937
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22495
local.identifier.citationvolume80
local.type.statusPublished Version

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