Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Ion implantation of SiC and GaN

Simple item page
dc.contributor.authorPapanicolaou, N
dc.contributor.authorRao, Mulpuri V
dc.contributor.authorMolnar, B
dc.contributor.authorTucker, J
dc.contributor.authorEdwards, Alasdair
dc.contributor.authorHolland, O
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:34:17Z
dc.date.issued1999
dc.date.updated2015-12-12T09:35:26Z
dc.description.abstractThe electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93396
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Aluminum; Annealing; Antimony; Arsenic; Carrier concentration; Diffusion; Nitrogen; Semiconducting gallium compounds; Semiconducting silicon compounds; Semiconductor doping; Silicon carbide; Thermodynamic stability; Gallium nitride; Ion implantation Activation; Annealing; GaN; Implantation; SiC
dc.titleIon implantation of SiC and GaN
dc.typeJournal article
local.bibliographicCitation.lastpage420
local.bibliographicCitation.startpage416
local.contributor.affiliationPapanicolaou, N, George Washington University
local.contributor.affiliationRao, Mulpuri V, George Mason University
local.contributor.affiliationMolnar, B, Naval Research Laboratory
local.contributor.affiliationTucker, J, George Mason University
local.contributor.affiliationEdwards, Alasdair, Ministry of Fisheries, Agriculture & Marine Resources
local.contributor.affiliationHolland, O, Oak Ridge National Laboratory
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub24738
local.identifier.citationvolumeB148
local.identifier.scopusID2-s2.0-0033513778
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Papanicolaou_Ion_implantation_of_SiC_and_1999.pdf
Size:
108.87 KB
Format:
Adobe Portable Document Format
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS