Ion implantation of SiC and GaN

Abstract

The electrical activation behavior of N- and Al-implantations in bulk V-doped semi-insulating 4H-SiC is similar to that in 4H-SiC epitaxial layers. The As- and Sb-implantations in p-type 6H-SiC epitaxial layers showed out-diffusion behavior with room-temperature sheet carrier concentrations of <20% of the implanted dose. In n-type GaN, compensating levels introduced by the high-dose implantation damage are thermally stable even at 1150°C annealing. Show more