Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Charge Density in Atmospheric Pressure Chemical Vapor Deposition TiO 2 on SiO 2 -Passivated Silicon

Date

Authors

McIntosh, Keith

Baker-Finch, Simeon

Grant, Nicholas

Thomson, Andrew

Singh, Sonita

Baikie, Iain D.

Publisher

Electrochemical Society Inc

Abstract

The charge density of a TiO2 film deposited on a SiO2 -passivated silicon wafer is determined. The TiO2 is deposited by atmospheric pressure chemical vapor deposition at 400°C, and the SiO2 is grown thermally at 950°C. This TiO2 - SiO2 stack is a useful

Keywords

Keywords: Atmospheric pressure chemical vapor deposition; Capacitance voltage; Conservative limits; Front surfaces; High-efficiency solar cells; Kelvin Probe measurements; Low density; Optical transmissions; Photoconductance; TiO; Upper limits; Atmospheric chemistr

URI

http://hdl.handle.net/1885/35794

Collections

ANU Research Publications

Source

Journal of the Electrochemical Society

Type

Journal article

DOI

10.1149/1.3216029

Restricted until

2037-12-31

Downloads

File

Description

01_McIntosh_Charge_Density_in_Atmospheric_2009.pdf (404.12 KB)