Modification of Mechanical Properties of Silicon Nanocantilevers by Self-ion Implantation

dc.contributor.authorVirwani, Kumar
dc.contributor.authorMalshe, Ajay P
dc.contributor.authorSood, Dinesh Kumar
dc.contributor.authorElliman, Robert
dc.date.accessioned2015-12-13T22:39:47Z
dc.date.available2015-12-13T22:39:47Z
dc.date.issued2004
dc.date.updated2015-12-11T09:52:18Z
dc.description.abstractThe modification of Young's modulus of silicon 3D nanostructures were studied using self-ion implantation at liquid nitrogen temperatures. The Young's modulus of the silicon nanostructres were produced by the implantation of nanoscale beams with Si ions at energies of 100 and 35 keV and dose of 1×10 15 ions/cm 2. It was observed that the Young's modulus of the bimaterial silicon nanostructures were 150.3 and the modulus of amorphous silicon nanostructures were 134.5 GPa. The results show that the fundamental mechanical properties of silicon nanocantilevers is controllably modified using self-ion implantation at nanometer scale.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/77938
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Nanostructures; Self-ion implantation; Silicon beams; Silicon nanocantilevers; Amorphization; Amorphous silicon; Atomic force microscopy; Computer simulation; Crystal orientation; Elastic moduli; Finite element method; Ion implantation; Monte Carlo method
dc.titleModification of Mechanical Properties of Silicon Nanocantilevers by Self-ion Implantation
dc.typeJournal article
local.bibliographicCitation.issue16
local.bibliographicCitation.lastpage3150
local.bibliographicCitation.startpage3148
local.contributor.affiliationVirwani, Kumar, University of Arkansas
local.contributor.affiliationMalshe, Ajay P, University of Arkansas
local.contributor.affiliationSood, Dinesh Kumar, RMIT University
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidElliman, Robert, u9012877
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub6662
local.identifier.citationvolume84
local.identifier.doi10.1063/1.1644612
local.identifier.scopusID2-s2.0-2442446939
local.type.statusPublished Version

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