Modification of Mechanical Properties of Silicon Nanocantilevers by Self-ion Implantation
Date
2004
Authors
Virwani, Kumar
Malshe, Ajay P
Sood, Dinesh Kumar
Elliman, Robert
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
The modification of Young's modulus of silicon 3D nanostructures were studied using self-ion implantation at liquid nitrogen temperatures. The Young's modulus of the silicon nanostructres were produced by the implantation of nanoscale beams with Si ions at energies of 100 and 35 keV and dose of 1×10 15 ions/cm 2. It was observed that the Young's modulus of the bimaterial silicon nanostructures were 150.3 and the modulus of amorphous silicon nanostructures were 134.5 GPa. The results show that the fundamental mechanical properties of silicon nanocantilevers is controllably modified using self-ion implantation at nanometer scale.
Description
Keywords
Keywords: Nanostructures; Self-ion implantation; Silicon beams; Silicon nanocantilevers; Amorphization; Amorphous silicon; Atomic force microscopy; Computer simulation; Crystal orientation; Elastic moduli; Finite element method; Ion implantation; Monte Carlo method
Citation
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Source
Applied Physics Letters
Type
Journal article