The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?

Abstract

The boron-oxygen defect density dependence on the boron concentration is taken for granted. Here we challenge that assumption and demonstrate that it is possible to predict the recombination activity of the boron-oxygen defect without assuming that the defect density depends on the boron concentration. Our model involves a negative-U defect with one shallow level. Changes in the Fermi level leads to changes in the occupation of the boron-oxygen defect with accompanying variations in the 'effective' defect density. Show more