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The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?

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dc.contributor.authorRougieux, Fiacre E
dc.contributor.authorSun, Chang
dc.contributor.authorJuhl, Mattias
dc.coverage.spatialCalgary, AB, Canada
dc.date.accessioned2024-05-16T01:15:06Z
dc.date.createdJune 15 to August 21st, 2020
dc.date.issued2020
dc.date.updated2023-01-15T07:16:57Z
dc.description.abstractThe boron-oxygen defect density dependence on the boron concentration is taken for granted. Here we challenge that assumption and demonstrate that it is possible to predict the recombination activity of the boron-oxygen defect without assuming that the defect density depends on the boron concentration. Our model involves a negative-U defect with one shallow level. Changes in the Fermi level leads to changes in the occupation of the boron-oxygen defect with accompanying variations in the 'effective' defect density.en_AU
dc.description.sponsorshipThis work was supported by the Australian Research Council (ARC) Discovery Early Career Researcher Award (DECRA) and ACAP projects, R4FR01, 1-SRI001en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.isbn978-1-7281-6116-7en_AU
dc.identifier.urihttp://hdl.handle.net/1885/317540
dc.language.isoen_AUen_AU
dc.publisherIEEEen_AU
dc.relationhttp://purl.org/au-research/grants/arc/DE160101368en_AU
dc.relation.ispartofseries47th IEEE Photovoltaic Specialists Conference (PVSC)en_AU
dc.rights© 2020 IEEEen_AU
dc.sourceIEEE Conference on Photovoltaic Specialistsen_AU
dc.titleThe Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?en_AU
dc.typeConference paperen_AU
local.bibliographicCitation.lastpage2524en_AU
local.bibliographicCitation.startpage2522en_AU
local.contributor.affiliationRougieux, Fiacre E, University of New South Walesen_AU
local.contributor.affiliationSun, Chang, College of Engineering, Computing and Cybernetics, ANUen_AU
local.contributor.affiliationJuhl, Mattias, University of New South Walesen_AU
local.contributor.authoruidSun, Chang, u5408594en_AU
local.description.embargo2099-12-31
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor400403 - Chemical engineering designen_AU
local.identifier.ariespublicationa383154xPUB18809en_AU
local.identifier.doi10.1109/PVSC45281.2020.9300431en_AU
local.identifier.scopusID2-s2.0-85099581847
local.publisher.urlhttps://www.ieee.org/en_AU
local.type.statusPublished Versionen_AU

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