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Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging

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dc.contributor.authorLim, Siew Yee
dc.contributor.authorForster, Maxime
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2015-12-07T22:43:21Z
dc.date.issued2013
dc.date.updated2015-12-07T11:17:34Z
dc.description.abstractThis paper introduces a method for estimating the shape of the solidification front along the height of a directionally-solidified multicrystalline silicon ingot. The technique uses net dopant density images, obtained on wafers via photoluminescence imagi
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/1885/24979
dc.publisherElsevier
dc.sourceJournal of Crystal Growth
dc.titleEstimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging
dc.typeJournal article
local.bibliographicCitation.issue364
local.bibliographicCitation.lastpage73
local.bibliographicCitation.startpage67
local.contributor.affiliationLim, Siew Yee, College of Engineering and Computer Science, ANU
local.contributor.affiliationForster, Maxime, APOLLON SOLAR
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.authoruidLim, Siew Yee, u4799476
local.contributor.authoruidMacDonald, Daniel, u9718154
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu5114172xPUB35
local.identifier.doi10.1016/j.jcrysgro.2012.11.056
local.identifier.scopusID2-s2.0-84888327483
local.identifier.thomsonID000314164500013
local.type.statusPublished Version

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