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Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging

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Authors

Lim, Siew Yee
Forster, Maxime
MacDonald, Daniel

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Elsevier

Abstract

This paper introduces a method for estimating the shape of the solidification front along the height of a directionally-solidified multicrystalline silicon ingot. The technique uses net dopant density images, obtained on wafers via photoluminescence imagi

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Citation

Source

Journal of Crystal Growth

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Restricted until

2037-12-31