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Vertically standing Ge nanowires on GaAs(110) substrates

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dc.contributor.authorSong, Man Suken_AU
dc.contributor.authorJung, Jae Hunen_AU
dc.contributor.authorKim, Yongen_AU
dc.contributor.authorWang, Yen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-08T22:37:33Z
dc.date.available2015-12-08T22:37:33Z
dc.date.issued2008
dc.date.updated2015-12-08T10:00:31Z
dc.description.abstractThe growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly a
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/35573
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.subjectKeywords: Epitaxial growth; Growth temperature; Semiconducting gallium arsenide; Substrates; Surface chemistry; Conventional surfaces; Epitaxial nanowires; Nanobridge devices; Temperature range; Nanowires; gallium arsenide; germanium; nanowire; silicon; article; cr
dc.titleVertically standing Ge nanowires on GaAs(110) substrates
dc.typeJournal article
local.bibliographicCitation.issue125602
local.bibliographicCitation.lastpage6
local.bibliographicCitation.startpage1
local.contributor.affiliationSong, Man Suk, Dong-A University
local.contributor.affiliationJung, Jae Hun, Dong-A University
local.contributor.affiliationKim, Yong, Dong-A University
local.contributor.affiliationWang, Y, Dong-A University
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB126
local.identifier.citationvolume19
local.identifier.doi10.1088/0957-4484/19/12/125602
local.identifier.scopusID2-s2.0-42549155307
local.identifier.thomsonID000254174200015
local.type.statusPublished Version

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