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Vertically standing Ge nanowires on GaAs(110) substrates

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Date

2008

Authors

Song, Man Suk
Jung, Jae Hun
Kim, Yong
Wang, Y
Zou, Jin
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly a

Description

Keywords

Keywords: Epitaxial growth; Growth temperature; Semiconducting gallium arsenide; Substrates; Surface chemistry; Conventional surfaces; Epitaxial nanowires; Nanobridge devices; Temperature range; Nanowires; gallium arsenide; germanium; nanowire; silicon; article; cr

Citation

URI

http://hdl.handle.net/1885/35573

Collections

ANU Research Publications

Source

Nanotechnology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0957-4484/19/12/125602

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