The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

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dc.contributor.authorGiulian, R.
dc.contributor.authorAraujo, L. L.
dc.contributor.authorKluth, P.
dc.contributor.authorSprouster, D. J.
dc.contributor.authorSchnohr, C. S.
dc.contributor.authorJohannessen, B.
dc.contributor.authorForan, G. J.
dc.contributor.authorRidgway, M. C.
dc.date.accessioned2015-12-03T02:55:27Z
dc.date.available2015-12-03T02:55:27Z
dc.date.issued2009-02-19
dc.date.updated2016-02-24T11:06:21Z
dc.description.abstractThe growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO₂ has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scatteringmeasurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O₂, or forming gas (95% N₂: 5% H₂) at temperatures ranging from 500 °C–1300 °C form spherical NCs with mean diameters ranging from 1–14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O₂ and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.
dc.description.sponsorshipWe thank the Australian Synchrotron Research Program and the Australian Research Council for financial support.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16996
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/12/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3079506
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Annealing; Bond length; Chemisorption; Gas absorption; Ion bombardment; Ion implantation; Nanocrystals; Platinum; Range finding; Transmission electron microscopy; X ray scattering; X ray spectroscopy; Annealing conditions; Forming gas; Mean diameters; Sma
dc.titleThe influence of annealing conditions on the growth and structure of embedded Pt nanocrystals
dc.typeJournal article
local.bibliographicCitation.issue4en_AU
local.bibliographicCitation.lastpage8
local.bibliographicCitation.startpage044303en_AU
local.contributor.affiliationGiulian, Raquel, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationAraujo, Leandro, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationKluth, Patrick, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSprouster, David, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSchnohr, Claudia, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJohannessen, B, Australian Nuclear Science and Technology Organisation, Australiaen_AU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation, Australiaen_AU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidU4174583en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absfor100708en_AU
local.identifier.ariespublicationu4363964xPUB12en_AU
local.identifier.citationvolume105en_AU
local.identifier.doi10.1063/1.3079506en_AU
local.identifier.scopusID2-s2.0-61449250691
local.identifier.thomsonID000263803300069
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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