The influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

Authors

Giulian, R.
Araujo, L. L.
Kluth, P.
Sprouster, D. J.
Schnohr, C. S.
Johannessen, B.
Foran, G. J.
Ridgway, M. C.

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American Institute of Physics (AIP)

Abstract

The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO₂ has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scatteringmeasurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O₂, or forming gas (95% N₂: 5% H₂) at temperatures ranging from 500 °C–1300 °C form spherical NCs with mean diameters ranging from 1–14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O₂ and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 °C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.

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Journal of Applied Physics

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