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Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

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dc.contributor.authorMackel, Helmut
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-13T22:46:00Z
dc.date.issued2005
dc.date.updated2015-12-11T10:26:27Z
dc.description.abstractAnalytical models of the spectral response of the voltage of silicon devices have been generalized using the concept of the internal quantum efficiency of the semiconductor. This allows the extension of models used in the analysis of the internal quantum
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/80063
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Internal quantum efficiency; Schottkey devices; Spectral photocurrent; Spectral response; Electric potential; Lighting; Photovoltaic effects; Quantum efficiency; Silicon wafers; Solar cells; Semiconductor devices
dc.titleGeneralized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices
dc.typeJournal article
local.bibliographicCitation.issue8
local.bibliographicCitation.lastpage9
local.bibliographicCitation.startpage1
local.contributor.affiliationMackel, Helmut, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.authoruidMackel, Helmut, u3333390
local.contributor.authoruidCuevas, Andres, u9308750
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub8399
local.identifier.citationvolume98
local.identifier.doi10.1063/1.2115094
local.identifier.scopusID2-s2.0-27744452428
local.type.statusPublished Version

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