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Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Date

Authors

Mackel, Helmut

Cuevas, Andres

Publisher

American Institute of Physics (AIP)

Abstract

Analytical models of the spectral response of the voltage of silicon devices have been generalized using the concept of the internal quantum efficiency of the semiconductor. This allows the extension of models used in the analysis of the internal quantum

Keywords

Keywords: Internal quantum efficiency; Schottkey devices; Spectral photocurrent; Spectral response; Electric potential; Lighting; Photovoltaic effects; Quantum efficiency; Silicon wafers; Solar cells; Semiconductor devices

URI

http://hdl.handle.net/1885/80063

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

DOI

10.1063/1.2115094

Restricted until

2037-12-31

Downloads

File

Description

01_Mackel_Generalized_models_of_the_2005.pdf (108.86 KB)

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