Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
dc.contributor.author | Fu, Lan | en_AU |
dc.contributor.author | Johnston, Michael B | en_AU |
dc.contributor.author | Gal, Michael | en_AU |
dc.contributor.author | Jagadish, Chennupati | en_AU |
dc.contributor.author | Tan, Hark Hoe | en_AU |
dc.date.accessioned | 2015-12-13T23:34:54Z | |
dc.date.issued | 1999 | |
dc.date.updated | 2015-12-12T09:37:56Z | |
dc.description.abstract | The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths. | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/93670 | |
dc.publisher | American Institute of Physics (AIP) | |
dc.source | Journal of Applied Physics | |
dc.subject | Keywords: Heterojunctions; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Proton irradiation; Quantum efficiency; Quantum well lasers; Rapid thermal annealing; Semiconducting indium gallium arsenide; Semiconductor growth; Substrates; | |
dc.title | Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers | |
dc.type | Journal article | |
local.bibliographicCitation.lastpage | 6789 | |
local.bibliographicCitation.startpage | 6786 | |
local.contributor.affiliation | Fu, Lan, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Johnston, Michael B, University of Oxford | |
local.contributor.affiliation | Gal, Michael, University of New South Wales | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
local.contributor.authoremail | u9715386@anu.edu.au | |
local.contributor.authoruid | Fu, Lan, u9715386 | |
local.contributor.authoruid | Tan, Hoe Hark, u9302338 | |
local.contributor.authoruid | Jagadish, Chennupati, u9212349 | |
local.description.embargo | 2037-12-31 | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.absfor | 020501 - Classical and Physical Optics | |
local.identifier.absfor | 091299 - Materials Engineering not elsewhere classified | |
local.identifier.ariespublication | MigratedxPub25061 | |
local.identifier.citationvolume | 85 | |
local.identifier.scopusID | 2-s2.0-0032620231 | |
local.identifier.uidSubmittedBy | Migrated | |
local.type.status | Published Version |
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