Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Date
1999
Authors
Fu, Lan
Johnston, Michael B
Gal, Michael
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.
Description
Keywords
Keywords: Heterojunctions; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Proton irradiation; Quantum efficiency; Quantum well lasers; Rapid thermal annealing; Semiconducting indium gallium arsenide; Semiconductor growth; Substrates;
Citation
Collections
Source
Journal of Applied Physics
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
Restricted until
2037-12-31
Downloads
File
Description