Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers

Date

1999

Authors

Fu, Lan
Johnston, Michael B
Gal, Michael
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.

Description

Keywords

Keywords: Heterojunctions; Ion implantation; Metallorganic chemical vapor deposition; Photoluminescence; Proton irradiation; Quantum efficiency; Quantum well lasers; Rapid thermal annealing; Semiconducting indium gallium arsenide; Semiconductor growth; Substrates;

Citation

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

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DOI

Restricted until

2037-12-31