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Evaluation of the Bulk Lifetime of Silicon Wafers by Immersion in Hydrofluoric Acid and Illumination

dc.contributor.authorGrant, Nicholas
dc.contributor.authorMcIntosh, Keith
dc.contributor.authorTan, Jason
dc.date.accessioned2015-12-07T22:18:45Z
dc.date.issued2012
dc.date.updated2015-12-07T08:25:17Z
dc.description.abstractWe report on a procedure to temporarily attain a very high level of surface passivation for silicon wafers at room temperature. When applied during a photoconductance measurement, the procedure permits an accurate assessment of the bulk lifetime, even for
dc.identifier.issn2162-8769
dc.identifier.urihttp://hdl.handle.net/1885/18973
dc.publisherThe Electrochemical Society
dc.sourceECS Journal of Solid State Science and Technology
dc.titleEvaluation of the Bulk Lifetime of Silicon Wafers by Immersion in Hydrofluoric Acid and Illumination
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage61
local.bibliographicCitation.startpage55
local.contributor.affiliationGrant, Nicholas, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, PV Lighthouse
local.contributor.affiliationTan, Jason, College of Engineering and Computer Science, ANU
local.contributor.authoruidGrant, Nicholas, u4488538
local.contributor.authoruidTan, Jason, u4099750
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4552802xPUB6
local.identifier.citationvolume1
local.identifier.doi10.1149/2.003202jss
local.identifier.scopusID2-s2.0-84884204789
local.identifier.thomsonID000319445100006
local.type.statusPublished Version

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