Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

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dc.contributor.authorFickenscher, M. A.en_AU
dc.contributor.authorJackson, H. E.en_AU
dc.contributor.authorSmith, L. M.en_AU
dc.contributor.authorYarrison-Rice, J. M.en_AU
dc.contributor.authorKang, J. H.en_AU
dc.contributor.authorPaiman, Suriatien_AU
dc.contributor.authorGao, Q.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-11-18T05:36:02Z
dc.date.available2015-11-18T05:36:02Z
dc.date.issued2011-12-29
dc.date.updated2016-02-24T10:38:32Z
dc.description.abstractWe use spatially and temporally resolved photoluminescence to measure excitondiffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InPnanowires.Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm²/s, while in the mixed phase, InPnanowireelectrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.
dc.description.sponsorshipWe acknowledge the financial support of the National Science Foundation through grants DMR-0806700, 0806572, 1105362, 1105121, and ECCS-1100489, and the Australian Research Council.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16513
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.3671367
dc.sourceApplied Physics Letters
dc.subjectKeywords: Core/shell; Diffusion constant; Direct imaging; Electrons and holes; Exciton diffusion; GaAs/AlGaAs; InP; Mixed phase; Modulation-doped; Quantum-confined state; Semiconductor nanowire; Single phase; Spatial diffusions; Temporally resolved; Wurtzites; Zinc
dc.titleDirect imaging of the spatial diffusion of excitons in single semiconductor nanowires
dc.typeJournal article
local.bibliographicCitation.issue26en_AU
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage263110en_AU
local.contributor.affiliationFickenscher, M A, University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationJackson, Howard E , University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationSmith, Leigh M , University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami, United States of Americaen_AU
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationPaiman, Suriati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoremailqiang.gao@anu.edu.auen_AU
local.contributor.authoruidu4006742en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020499en_AU
local.identifier.ariespublicationu4153526xPUB86en_AU
local.identifier.citationvolume99en_AU
local.identifier.doi10.1063/1.3671367en_AU
local.identifier.scopusID2-s2.0-84863419399
local.identifier.thomsonID000298638500053
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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