Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
Date
2011-12-29
Authors
Fickenscher, M. A.
Jackson, H. E.
Smith, L. M.
Yarrison-Rice, J. M.
Kang, J. H.
Paiman, Suriati
Gao, Q.
Jagadish, C.
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
We use spatially and temporally resolved photoluminescence to measure excitondiffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InPnanowires.Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm²/s, while in the mixed phase, InPnanowireelectrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.
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Keywords: Core/shell; Diffusion constant; Direct imaging; Electrons and holes; Exciton diffusion; GaAs/AlGaAs; InP; Mixed phase; Modulation-doped; Quantum-confined state; Semiconductor nanowire; Single phase; Spatial diffusions; Temporally resolved; Wurtzites; Zinc
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Applied Physics Letters
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Journal article
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