Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
Date
2007-10-25
Authors
Jolley, G
Fu, Lan
Jagadish, C.
Tan, Hark Hoe
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American Institute of Physics (AIP)
Abstract
We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition.In₀.₅Ga₀.₅Asquantum dots embedded in an In₀.₁₅Ga₀.₈₅As/GaAsquantum well(QW) or a GaAs/Al0.2Ga0.8AsQW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al₀.₂Ga₀.₈AsQW.
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Keywords: Metallorganic chemical vapor deposition; Photodetectors; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Atmospheric window; Barrier composition; Spectral response; Semiconductor quantum wells
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Applied Physics Letters
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Journal article
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