Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
dc.contributor.author | Jolley, G | en_AU |
dc.contributor.author | Fu, Lan | en_AU |
dc.contributor.author | Jagadish, C. | en_AU |
dc.contributor.author | Tan, Hark Hoe | en_AU |
dc.date.accessioned | 2015-12-15T04:20:03Z | |
dc.date.available | 2015-12-15T04:20:03Z | |
dc.date.issued | 2007-10-25 | |
dc.date.updated | 2016-02-24T11:43:06Z | |
dc.description.abstract | We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition.In₀.₅Ga₀.₅Asquantum dots embedded in an In₀.₁₅Ga₀.₈₅As/GaAsquantum well(QW) or a GaAs/Al0.2Ga0.8AsQW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al₀.₂Ga₀.₈AsQW. | |
dc.description.sponsorship | The Australian Research Council is gratefully acknowledged for the financial support. | en_AU |
dc.identifier.issn | 0003-6951 | en_AU |
dc.identifier.uri | http://hdl.handle.net/1885/95025 | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2802559 | |
dc.source | Applied Physics Letters | |
dc.subject | Keywords: Metallorganic chemical vapor deposition; Photodetectors; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Atmospheric window; Barrier composition; Spectral response; Semiconductor quantum wells | |
dc.title | Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors | |
dc.type | Journal article | |
local.bibliographicCitation.issue | 17 | en_AU |
local.bibliographicCitation.lastpage | 3 | |
local.bibliographicCitation.startpage | 173508 | en_AU |
local.contributor.affiliation | Jolley, Greg, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Fu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.authoremail | gregory.jolley@ anu.edu.au | en_AU |
local.contributor.authoruid | u4041632 | en_AU |
local.description.notes | Imported from ARIES | en_AU |
local.identifier.absfor | 100799 | en_AU |
local.identifier.ariespublication | u8709800xPUB7 | en_AU |
local.identifier.citationvolume | 91 | en_AU |
local.identifier.doi | 10.1063/1.2802559 | en_AU |
local.identifier.scopusID | 2-s2.0-35548975757 | |
local.identifier.uidSubmittedBy | u3488905 | en_AU |
local.publisher.url | https://www.aip.org/ | en_AU |
local.type.status | Published Version | en_AU |
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