Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

dc.contributor.authorJolley, Gen_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-15T04:20:03Z
dc.date.available2015-12-15T04:20:03Z
dc.date.issued2007-10-25
dc.date.updated2016-02-24T11:43:06Z
dc.description.abstractWe report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition.In₀.₅Ga₀.₅Asquantum dots embedded in an In₀.₁₅Ga₀.₈₅As/GaAsquantum well(QW) or a GaAs/Al0.2Ga0.8AsQW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al₀.₂Ga₀.₈AsQW.
dc.description.sponsorshipThe Australian Research Council is gratefully acknowledged for the financial support.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/95025
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2802559
dc.sourceApplied Physics Letters
dc.subjectKeywords: Metallorganic chemical vapor deposition; Photodetectors; Semiconducting indium gallium arsenide; Semiconductor quantum dots; Atmospheric window; Barrier composition; Spectral response; Semiconductor quantum wells
dc.titleInfluence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
dc.typeJournal article
local.bibliographicCitation.issue17en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage173508en_AU
local.contributor.affiliationJolley, Greg, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoremailgregory.jolley@ anu.edu.auen_AU
local.contributor.authoruidu4041632en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationu8709800xPUB7en_AU
local.identifier.citationvolume91en_AU
local.identifier.doi10.1063/1.2802559en_AU
local.identifier.scopusID2-s2.0-35548975757
local.identifier.uidSubmittedByu3488905en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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