Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors
We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition.In₀.₅Ga₀.₅Asquantum dots embedded in an In₀.₁₅Ga₀.₈₅As/GaAsquantum well(QW) or a GaAs/Al0.2Ga0.8AsQW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al₀.₂Ga₀.₈AsQW.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jolley_Influence_of_quantum_well_and_2007.pdf||Published Version||304.74 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.