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Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Jolley, G.; Fu, L.; Tan, H. H.; Jagadish, C.


We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition.In₀.₅Ga₀.₅Asquantum dots embedded in an In₀.₁₅Ga₀.₈₅As/GaAsquantum well(QW) or a GaAs/Al0.2Ga0.8AsQW have been incorporated into photodetectors and were characterized. A spectral response in the 3–5μm atmospheric window has been achieved by adopting the GaAs∕Al₀.₂Ga₀.₈AsQW.

CollectionsANU Research Publications
Date published: 2007-10-25
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2802559


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