Pulsed Anodic Oxidation of GaAs for Impurity-free Interdiffusion of GaAs/AlGaAs Quantum Wells
Date
2000
Authors
Deenapanray, Prakash
Fu, Lan
Petravic, Mladen
Jagadish, Chennupati
Gong, Bin
Lamb, Robert Norman
Journal Title
Journal ISSN
Volume Title
Publisher
John Wiley & Sons Inc
Abstract
The use of pulsed anodic oxidation of GaAs for impurity-free quantum well interdiffusion is demonstrated. The GaAs capping layer of a single GaAs/Al0.3Ga0.7 As quantum well structure was oxidized and rapid thermal annealing (RTA) at 900 °C for 60 s was c
Description
Keywords
Keywords: Anodic oxidation; Crystal defects; Deep level transient spectroscopy; Epitaxial growth; Interdiffusion (solids); Rapid thermal annealing; Semiconducting aluminum compounds; Semiconducting films; Semiconducting gallium arsenide; X ray photoelectron spectro
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Source
Surface and Interface Analysis
Type
Journal article