Solubility Limits of Dopants in 4H-SiC
Date
2003
Authors
Linnarsson, M K
Zimmermann, U
Wong-Leung, Jennifer
Schoner, A
Janson, M S
Jagadish, Chennupati
Svensson, Bengt Gunnar
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Epitaxial 4H-SiC structures with heavily boron or aluminium doped layers have been prepared by vapour phase epitaxy. The samples have been annealed in Ar atmosphere in an RF-heated furnace between 1700 and 2000 °C for 45 min to 64 h. Secondary ion mass s
Description
Keywords
Keywords: Annealing; Doping (additives); Furnaces; Phase composition; Precipitation (chemical); Secondary ion mass spectrometry; Solubility; Transmission electron microscopy; Vapor phase epitaxy; Solubility limits; Silicon carbide Precipitates; SiC; SIMS; Solubility limit; TEM
Citation
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Source
Applied Surface Science
Type
Journal article
Book Title
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Restricted until
2037-12-31