Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties
In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Crystal Growth|
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