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Metalorganic Chemical Vapor Deposition of GaAsN Epilayers: Microstructures and Optical Properties

Gao, Qiang; Jagadish, Chennupati; Sun, B Q; Gal, Michael; Ouyang, L; Zou, Jin; Tan, Hark Hoe


In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were...[Show more]

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
Source: Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2003.12.068


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