Crystal phases in III-V nanowires: From random toward engineered polytypism
Date
2011
Authors
Caroff, Philippe
Bolinsson, Jessica
Johansson, Jonas
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random
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Keywords
Keywords: III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; Polytypism; thermodynamic modeling; Twin planes; Vapor-liquid-solid growth; Wurtzites; zinc blende (ZB); Epitaxial growth; Molecul Gold-assisted vapor-liquid-solid (VLS) growth; III-V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; polytypism; stacking faults (SFs); thermodynamic modeling; twin plane (TP); wurtzit
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Source
IEEE Journal on Selected Topics in Quantum Electronics
Type
Journal article
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Restricted until
2037-12-31
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