Minority carrier lifetime in plasma-textured silicon wafers for solar cells
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Kumaravelu, G; Alkaisi, M M; MacDonald, Daniel; Zhao, J; Rong, B; Bittar, A
Description
In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1×1015 cm-3. The measured lifetimes correspond to an implied...[Show more]
Collections | ANU Research Publications |
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Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/81307 |
Source: | Solar Energy Materials and Solar Cells |
DOI: | 10.1016/j.solmat.2004.07.015 |
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01_Kumaravelu_Minority_carrier_lifetime_in_2005.pdf | 278.94 kB | Adobe PDF | Request a copy |
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