Kumaravelu, G; Alkaisi, M M; MacDonald, Daniel; Zhao, J; Rong, B; Bittar, A
In this work a comparison between plasma-induced defects by two different SF6 texturing techniques, reactive ion etching (RIE) and high-density plasma (HDP) is presented. It is found that without any defect-removal etching (DRE), the minority carrier lifetime is the highest for the HDP technique. After DRE, the minority carrier lifetime rises as high as 750 μs for both RIE- and HDP-textured wafers at an excess carrier density of 1×1015 cm-3. The measured lifetimes correspond to an implied...[Show more]
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