Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices
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Mackel, Helmut
Cuevas, Andres
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American Institute of Physics (AIP)
Abstract
Analytical models of the spectral response of the voltage of silicon devices have been generalized using the concept of the internal quantum efficiency of the semiconductor. This allows the extension of models used in the analysis of the internal quantum
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Journal of Applied Physics
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2037-12-31
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