Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates
Date
2009
Authors
Caroff, Philippe
Bertru, N
Lu, W
Elias, G
Dehaese, O
Letoublon, A
Le Corre, A
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Volume Title
Publisher
Elsevier
Abstract
We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the
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Keywords
Keywords: A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots; Capping layers; Critical thickness; Double-cap procedures; InAs; InAs quantum dots; Inp; InP substrates; Mass transports; Substrate temperatures; Crystal growth A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots
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Source
Journal of Crystal Growth
Type
Journal article
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2037-12-31
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