Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
Date
2002
Authors
Kucheyev, Sergei
Williams, James
Zou, Jin
Li, Gang
Jagadish, Chennupati
Titov, A I
Journal Title
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Volume Title
Publisher
Elsevier
Abstract
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results
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Keywords
Keywords: Crystal defects; Gallium compounds; Ion bombardment; Rutherford backscattering spectroscopy; Thermal effects; Transmission electron microscopy; Channeling spectrometry; Ion implantation Collision cascade; Defects; GaN; Ion implantation
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Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article
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Restricted until
2037-12-31
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