Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Kucheyev_Effect_of_Ion_Species_on_2002.pdf||157.59 kB||Adobe PDF||Request a copy|
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