The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility
Su, Xueqiong; Wang, Li; Lu, Yi; Gan, Yu-Lin; Wang, Rongping
Description
We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The eff
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2014 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/71061 |
| Source: | Vacuum |
| DOI: | 10.1016/j.vacuum.2014.01.025 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Su_The_effect_of_thermal_2014.pdf | 1.07 MB | Adobe PDF | Request a copy |
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