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The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility

Su, Xueqiong; Wang, Li; Lu, Yi; Gan, Yu-Lin; Wang, Rongping

Description

We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The eff

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/71061
Source: Vacuum
DOI: 10.1016/j.vacuum.2014.01.025

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