The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility

Date

2014

Authors

Su, Xueqiong
Wang, Li
Lu, Yi
Gan, Yu-Lin
Wang, Rongping

Journal Title

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Volume Title

Publisher

Pergamon Press

Abstract

We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The eff

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Citation

Source

Vacuum

Type

Journal article

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Restricted until

2037-12-31