High-endurance megahertz electrical self-oscillation in Ti/NbO x bilayer structures
Date
2015
Authors
Li, Shuai
Liu, Xinjun
Nandi, Sanjoy
Venkatachalam, Dinesh
Elliman, Robert
Journal Title
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Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Electrical self-oscillation is reported for a Ti/NbO<inf>x</inf> negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V,
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Keywords
Keywords: Physical properties; Bi-layer structure; Circuit configurations; Device operations; Low operating voltage; Negative differential resistance device; Neuromorphic computing; Operating frequency; Self-oscillations; Negative resistance
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Source
Applied Physics Letters
Type
Journal article
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Open Access
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