Very low bulk and surface recombination in oxidized silicon wafers
Date
2002
Authors
Kerr, Mark
Cuevas, Andres
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Publisher
Institute of Physics Publishing
Abstract
Bulk and surface processes determine the recombination rate in crystalline silicon wafers. In this paper we report effective lifetime measurements for a variety of commercially available float-zone silicon wafers that have been carefully passivated using
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Keywords: Carrier concentration; Crystalline materials; High temperature effects; Optimization; Semiconductor doping; Silica; Surface phenomena; Thermooxidation; Surface recombinations; Silicon wafers
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Source
Semiconductor Science and Technology
Type
Journal article
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Restricted until
2037-12-31
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