Very low bulk and surface recombination in oxidized silicon wafers

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dc.contributor.authorKerr, Mark
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-10T23:36:02Z
dc.date.issued2002
dc.date.updated2015-12-10T11:48:52Z
dc.description.abstractBulk and surface processes determine the recombination rate in crystalline silicon wafers. In this paper we report effective lifetime measurements for a variety of commercially available float-zone silicon wafers that have been carefully passivated using
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/1885/69975
dc.publisherInstitute of Physics Publishing
dc.sourceSemiconductor Science and Technology
dc.subjectKeywords: Carrier concentration; Crystalline materials; High temperature effects; Optimization; Semiconductor doping; Silica; Surface phenomena; Thermooxidation; Surface recombinations; Silicon wafers
dc.titleVery low bulk and surface recombination in oxidized silicon wafers
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage38
local.bibliographicCitation.startpage35
local.contributor.affiliationKerr, Mark, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.authoremailu9308750@anu.edu.au
local.contributor.authoruidKerr, Mark, u9315108
local.contributor.authoruidCuevas, Andres, u9308750
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020405 - Soft Condensed Matter
local.identifier.ariespublicationMigratedxPub2179
local.identifier.citationvolume17
local.identifier.doi10.1088/0268-1242/17/1/306
local.identifier.scopusID2-s2.0-0036141466
local.identifier.uidSubmittedByMigrated
local.type.statusPublished Version

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