Possibility of improved frequency response from intermixed quantum-well devices
Date
2001
Authors
Dao, Lap Van
Gal, Michael
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
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Volume Title
Publisher
Academic Press
Abstract
We have measured the carrier capture times into intermixed In0.15Ga0.85As/Al0.2Ga0.8As quantum wells using the photoluminescence up-conversion technique. We confirm that the carrier capture into intermixed quantum wells is significantly shorter than capture into similar but nonintermixed samples. Using below and above band-gap excitation we were able to separate the various components effecting the carrier capture into the quantum well. We show that the reduction in the carrier capture times is not related to the introduction of nonradiative centres but is the consequence of the change in the quantum well potential caused by intermixing. These results indicate that intermixed devices may have higher cut-off modulation frequency than similar but nonintermixed devices.
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Keywords
Keywords: Energy gap; Mixing; Photoluminescence; Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Carrier capture; Intermixing; Semiconducting aluminum gallium arsenide; Semiconductor quantum wells InGaAs/AlGaAs; Intermixing; Photoluminescence; Quantum wells
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Source
Superlattices and Microstructures
Type
Journal article
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2037-12-31
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