Possibility of improved frequency response from intermixed quantum-well devices
dc.contributor.author | Dao, Lap Van | en_AU |
dc.contributor.author | Gal, Michael | en_AU |
dc.contributor.author | Fu, Lan | en_AU |
dc.contributor.author | Jagadish, Chennupati | en_AU |
dc.contributor.author | Tan, Hark Hoe | en_AU |
dc.date.accessioned | 2015-12-10T23:30:46Z | |
dc.date.issued | 2001 | |
dc.date.updated | 2015-12-10T11:09:30Z | |
dc.description.abstract | We have measured the carrier capture times into intermixed In0.15Ga0.85As/Al0.2Ga0.8As quantum wells using the photoluminescence up-conversion technique. We confirm that the carrier capture into intermixed quantum wells is significantly shorter than capture into similar but nonintermixed samples. Using below and above band-gap excitation we were able to separate the various components effecting the carrier capture into the quantum well. We show that the reduction in the carrier capture times is not related to the introduction of nonradiative centres but is the consequence of the change in the quantum well potential caused by intermixing. These results indicate that intermixed devices may have higher cut-off modulation frequency than similar but nonintermixed devices. | |
dc.identifier.issn | 0749-6036 | |
dc.identifier.uri | http://hdl.handle.net/1885/68328 | |
dc.publisher | Academic Press | |
dc.source | Superlattices and Microstructures | |
dc.subject | Keywords: Energy gap; Mixing; Photoluminescence; Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Carrier capture; Intermixing; Semiconducting aluminum gallium arsenide; Semiconductor quantum wells InGaAs/AlGaAs; Intermixing; Photoluminescence; Quantum wells | |
dc.title | Possibility of improved frequency response from intermixed quantum-well devices | |
dc.type | Journal article | |
local.bibliographicCitation.issue | 2 | |
local.bibliographicCitation.lastpage | 110 | |
local.bibliographicCitation.startpage | 105 | |
local.contributor.affiliation | Dao, Lap Van, Swinburne University of Technology | |
local.contributor.affiliation | Gal, Michael, University of New South Wales | |
local.contributor.affiliation | Fu, Lan, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Tan, Hoe Hark, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
local.contributor.authoremail | u9715386@anu.edu.au | |
local.contributor.authoruid | Fu, Lan, u9715386 | |
local.contributor.authoruid | Tan, Hoe Hark, u9302338 | |
local.contributor.authoruid | Jagadish, Chennupati, u9212349 | |
local.description.embargo | 2037-12-31 | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.absfor | 020501 - Classical and Physical Optics | |
local.identifier.absfor | 091299 - Materials Engineering not elsewhere classified | |
local.identifier.ariespublication | MigratedxPub1683 | |
local.identifier.citationvolume | 29 | |
local.identifier.doi | 10.1006/spmi.2000.0958 | |
local.identifier.scopusID | 2-s2.0-0035246699 | |
local.identifier.uidSubmittedBy | Migrated | |
local.type.status | Published Version |
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