Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
The increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Boudinov_Electrical_Isolation_of_n-type_2001.pdf||212.53 kB||Adobe PDF||Request a copy|
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