Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Date
2012
Authors
Parkinson, Patrick
Dodson, Christopher
Joyce, Hannah J
Bertness, Kris A.
Sanford, Norman A.
Herz, Laura
Johnston, Michael B
Journal Title
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Volume Title
Publisher
American Chemical Society
Abstract
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
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Keywords
Keywords: Bulk materials; Catalyst-free; Crystalline structure; Gallium nitride nanowires; GaN; GaN nanowires; High mobility; Non-contact; Noncontact measurements; Surface plasmons; Surface trap; Tera Hertz; Gallium nitride; Molecular beam epitaxy; Photoconductivit GaN; nanowire; photoconductivity; surface plasmon; terahertz
Citation
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Source
Nano Letters
Type
Journal article
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Restricted until
2037-12-31
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