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Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Parkinson, Patrick; Dodson, Christopher; Joyce, Hannah J; Bertness, Kris A.; Sanford, Norman A.; Herz, Laura; Johnston, Michael B

Description

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/66757
Source: Nano Letters
DOI: 10.1021/nl301898m

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