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Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices

Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Hwang, Hyunsang


The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/43/49/495104


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