Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices
Date
2010
Authors
Biju, Kuyyadi P.
Liu, Xinjun
Bourim, El Mostafa
Kim, Insung
Jung, Seungjae
Siddik, Manzar
Lee, Joonmyoung
Hwang, Hyunsang
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Institute of Physics Publishing
Abstract
The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density.
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Keywords
Keywords: Bistables; Bottom electrodes; Crossbar arrays; Low-resistance state; Memory density; Rectification ratio; Rectifying effect; Resistive switching; Reverse bias; Schottky contacts; Sol-gel spin coating; Solution-processed; Switching mechanism; TiO; Via-hole
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Source
Journal of Physics D: Applied Physics
Type
Journal article
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2037-12-31
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