Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Hwang, Hyunsang
The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.