Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices

Simple item page
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorLiu, Xinjun
dc.contributor.authorBourim, El Mostafa
dc.contributor.authorKim, Insung
dc.contributor.authorJung, Seungjae
dc.contributor.authorSiddik, Manzar
dc.contributor.authorLee, Joonmyoung
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:24Z
dc.date.issued2010
dc.date.updated2016-02-24T09:57:18Z
dc.description.abstractThe resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2 V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density.
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/1885/65612
dc.publisherInstitute of Physics Publishing
dc.sourceJournal of Physics D: Applied Physics
dc.subjectKeywords: Bistables; Bottom electrodes; Crossbar arrays; Low-resistance state; Memory density; Rectification ratio; Rectifying effect; Resistive switching; Reverse bias; Schottky contacts; Sol-gel spin coating; Solution-processed; Switching mechanism; TiO; Via-hole
dc.titleAsymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices
dc.typeJournal article
local.bibliographicCitation.issue49
local.bibliographicCitation.lastpage5
local.bibliographicCitation.startpage1
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBourim, El Mostafa, Gwangju Institute of Science and Technology
local.contributor.affiliationKim, Insung, Gwangju Institute of Science and Technology
local.contributor.affiliationJung, Seungjae, Gwangju Institute of Science and Technology
local.contributor.affiliationSiddik, Manzar, Gwangju Institute of Science and Technology
local.contributor.affiliationLee, Joonmyoung, Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091205 - Functional Materials
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970109 - Expanding Knowledge in Engineering
local.identifier.ariespublicationU3488905xPUB1132
local.identifier.citationvolume43
local.identifier.doi10.1088/0022-3727/43/49/495104
local.identifier.scopusID2-s2.0-78650102388
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Biju_Asymmetric_bipolar_resistive_2010.pdf
Size:
613.69 KB
Format:
Adobe Portable Document Format
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS