Effect of low Ge content on B diffusion in amorphous SiGe alloys
Diffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, a
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science and Technology B|
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