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Effect of low Ge content on B diffusion in amorphous SiGe alloys

Edelman, L A; Elliman, Robert; Rubin, L; Washington, L; Jones, K S

Description

Diffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, a

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/33890
Source: Journal of Vacuum Science and Technology B
DOI: 10.1116/1.2781511

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