Effect of low Ge content on B diffusion in amorphous SiGe alloys
Date
2008
Authors
Edelman, L A
Elliman, Robert
Rubin, L
Washington, L
Jones, K S
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Diffusion of B in amorphous Si is known to be four orders of magnitude higher than in crystalline Si. The effect of Ge at low concentrations on B diffusion in the amorphous phase is unknown. 1.5 μm thick relaxed layers of varying SiGe alloys (0, 6, 12, a
Description
Keywords
Keywords: Orders of magnitude; Preexponential factors; Solid phase epitaxial regrowth; Strain-relaxed crystalline; Amorphous alloys; Crystalline materials; Diffusion; Epitaxial growth; Recrystallization (metallurgy); Secondary ion mass spectrometry; Germanium compo
Citation
Collections
Source
Journal of Vacuum Science and Technology B
Type
Journal article
Book Title
Entity type
Access Statement
License Rights
DOI
10.1116/1.2781511