Low-temperature UV photoluminescence of ion beam synthesized Si nanoclusters embedded in Si
Date
2012
Authors
Sahu, G
Lenka, H P
Mahapatra, D P
Rout, B
Das, Mukunda P
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Publisher
IOP Publishing
Abstract
Ultraviolet (UV) photoluminescence (PL) data taken on a double Au implanted Si matrix are reported. This has been studied over a wide temperature range of 28-220 K. At low temperature, the spectrum shows four peaks corresponding to a zero-phonon line (ZPL
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Advances in Natural Sciences: Nanoscience and Nanotechnology
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Journal article
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Open Access
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Restricted until
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